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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION *With MT-200 package *High power dissipation APPLICATIONS *For power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -130 -130 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SA1108 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 B -130 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A B -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V A ICBO Collector cut-off current VCB=-130V; IE=0 -5 IEBO Emitter cut-off current VEB=-5V; IC=0 -5 A hFE-1 DC current gain IC=-2A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-5A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-10V 60 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1108 Fig.2 outline dimensions 3 |
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